Description
Speed that stays ahead
The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching up to 43% faster than the 970 EVO Plus 2TB. Wait less for games and access big files quick.
Evolved power efficiency
Turn right on and stay on. With a remarkable 70% improvement in power efficiency over the previous model, compute for longer without worrying about battery life. Plus, it supports Modern Standby, letting you stay connected to the internet and still receive notifications even in the low-power state.
Smart thermal solution
The 990 EVO’s heat spreader label helps thermal control of the NAND chip. Samsung’s cutting-edge thermal control algorithm, paired with Dynamic Thermal Guard, ensures both consistent and reliable performance. Keep your performance red-hot, not your drive.
Specifications
General Feature
- Application: Client PCs
- Rated Capacity: 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
- Form Factor: M.2 (2280)
- Interface: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
- Dimension (WxHxD): 80 x 22 x 2.38 mm
- Weight: Max 9.0g Weight
- Storage Memory: Samsung V-NAND TLC
- Controller: Samsung in-house Controller
- Cache Memory: HMB(Host Memory Buffer)
Special Feature
- TRIM Support: Supported
- S.M.A.R.T Support: Supported
- GC (Garbage Collection): Auto Garbage Collection Algorithm
- Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
- WWN Support: Not supported
- Device Sleep Mode Support: Yes
Performance
- Sequential Read: Up to 5,000 MB/s * Performance may vary based on system hardware & configuration
- Sequential Write: Up to 4,200 MB/s * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD32): Up to 700,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD32): Up to 800,000 IOPS * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD1): Up to 20,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD1): Up to 90,000 IOPS * Performance may vary based on system hardware & configuration
Environment
- Average Power Consumption (system level): *Average: Read 5.5 W / Write 4.7 W* Actual power consumption may vary depending on system hardware & configuration
- Power consumption (Idle): Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration
- Power Consumption (Device Sleep): Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration
- Allowable Voltage: 3.3 V ± 5 % Allowable voltage
- Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
- Operating Temperature: 0 – 70 ℃ Operating Temperature
- Shock: 1,500 G & 0.5 ms (Half sine)
SAMSUNG MZ-V9E2T0BW 990 EVO 2TB NVMe SSD – Read Speed up to 5000 MB/s; Write Speed to up 4200 MB/s; Random Read up to 700;000 IO
