Transcend MTE110Q 1TB NVMe SSD

SKU: TS1TMTE110Q
Out of stock
R1,379
Out of stock

Pricing is already subject to a 3% discount which is only applicable to EFT payments.

🚚 Dispatch lead time 2-3 business days.

SKU: TS1TMTE110Q Category:

Description

PCIe SSD 110Q

Transcend’s PCIe® SSD 110Q utilizes top-notch technology QLC 3D NAND to enhance storage density that supports read/write intensive workloads. Implemented with PCI Express® Gen3 x4 high-speed interface, the read speed is up to 2,000 MB/s while write speed is up to 1,500 MB/s. To upgrade your computing devices, SSD 110Q is the most economical solution for all!

Best performance in the extreme

Transcend’s PCIe SSD 110Q follows NVMe 1.3 and utilizes the PCIe Gen3 x4 interface, meaning four lanes are used for transmitting and receiving data simultaneously, resulting in compelling performance of up to 2,000MB/s read and 1,500MB/s write.

Less is more

Leveraging QLC 3D NAND technology, PCIe SSD 110Q stacks 4-bit-per-cell vertically to enhance the storage density. QLC NAND supports read/write intensive applications, and leads SSD 110Q to become one of the flash memories with the highest density in the market. Users can store as much data as they want!

Understanding the NVMe PCIe interface

NVMe® (or NVM Express®) is a host controller interface standard designed to address the needs of enterprise and client applications that utilize PCIe®(PCI Express®) solid-state storage. NVMe calls for better performance vectors than AHCI (Advanced Host Controller Interface), including scalable bandwidth, increased IOPS, and low latency.

Low power, high efficiency

PCIe SSD 110Q not only optimizes the transfer speeds and storage density, its low-power consumption also makes the device even more lasting and efficient. The most economical solution is up to you to choose.

Specifications

Appearance

Type
  • M.2 2280
Dimensions Double-sided 80 mm x 22 mm x 3.58 mm (3.15″ x 0.87″ x 0.14″)
Weight 8 g (0.28 oz)

Interface

Bus Interface
  • NVMe PCIe Gen3 x4

Storage

Flash Type
  • QLC NAND flash
Capacity
  • 1 TB

Operating Environment

Operating Temperature 0°C (32°F) ~ 70°C (158°F)
Operating Voltage
  • 3.3V±5%

Performance

Sequential Read/Write (CrystalDiskMark)
  • 1 TB

    Up to 2,000/1,500 MB/s

4K Random Read/Write (IOmeter)
  • 1 TB

    Up to 170,000/250,000 IOPS

Terabytes Written (TBW)
  • 1 TB

    300 TBW

Mean Time Between Failures (MTBF) 2,000,000 hour(s)
Drive Writes Per Day (DWPD) 0.27 (3 yrs)

Transcend 1TB Mte110q Pci-e M.2 2280 Ssd Nvme Gen 3×4 – Qlc

Additional information

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