Description
SAMSUNG MZ-V9S2T0BW 990 EVO Plus 2TB NVMe SSD – Read Speed up to 7250 MB/s; Write Speed to up 6300 MB/s; Random Read up to 1 000
Specifications
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Interface
PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
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Application
Client PCs
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Dimension (W x H x D)
Max 80.15 x Max 22.15 x Max 2.38 mm
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Form Factor
M.2 (2280)
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Application
Client PCs
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Capacity
2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
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Form Factor
M.2 (2280)
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Interface
PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
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Dimension (W x H x D)
Max 80.15 x Max 22.15 x Max 2.38 mm
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Weight
Max 9.0g
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Storage Memory
Samsung V-NAND TLC
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Controller
Samsung in-house Controller
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Cache Memory
HMB(Host Memory Buffer)
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TRIM Support
Supported
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S.M.A.R.T Support
Supported
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GC (Garbage Collection)
Auto Garbage Collection Algorithm
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Encryption Support
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
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WWN Support
Not supported
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Device Sleep Mode Support
Yes
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Sequential Read
Up to 7,250 MB/s * Performance may vary based on system hardware & configuration
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Sequential Write
Up to 6,300 MB/s * Performance may vary based on system hardware & configuration
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Random Read (4 KB, QD32)
Up to 1,000,000 IOPS * Performance may vary based on system hardware & configuration
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Random Write (4 KB, QD32)
Up to 1,350,000 IOPS * Performance may vary based on system hardware & configuration
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Average Power Consumption (System Level)
Average: Read 4.6 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration
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Power consumption (Idle)
Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration
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Power Consumption (Device Sleep)
Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration
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Allowable Voltage
3.3 V ± 5 %
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Reliability (MTBF)
1.5 Million Hours
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Operating Temperature
0 – 70 ℃
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Shock
1,500 G & 0.5 ms (Half sine)
